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Katsunori MAKIHARA

Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 694-698 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon quantum dot, silicide nanodot, hybrid floating gate, optical response,
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X-Ray Photoemission Study of SiO₂/Si/Si_0.55Ge_0.45/Si Heterostructures Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI Masao SAKURABA Junichi MUROTA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 680-685 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: silicon germanium, heterostructure, chemical bonding features, valence band alignment, X-ray photoelectron spectroscopy,
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Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System Motoki FUKUSIMA Akio OHTA Katsunori MAKIHARA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 708-713 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: resistive random access memory (ReRAM), Si oxide, chemical bonding features, X-ray photoelectron spectroscopy, resistance switching property,
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Evaluation of Chemical Composition and Bonding Features of Pt/SiO_x/Pt MIM Diodes and Its Impact on Resistance Switching Behavior Akio OHTA Katsunori MAKIHARA Mitsuhisa IKEDA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 702-707 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Resistive Random Access Memory (ReRAM), Si oxide, Pt electrodes, chemical bonding features, resistance switching,
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Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy Daichi TAKEUCHI Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI Hirokazu KAKI Tsukasa HAYASHI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 718-721 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si nanocolumnar structure, AFM, current image, electron emission,
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Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor Masakazu MURAGUCHI Yoko SAKURAI Yukihiro TAKADA Shintaro NOMURA Kenji SHIRAISHI Mitsuhisa IKEDA Katsunori MAKIHARA Seiichi MIYAZAKI Yasuteru SHIGETA Tetsuo ENDOH
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 730-736 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: electron dynamics, collective motion of electron, Si-nano dot, two-dimensional electron gas, tunneling, Si-nano dot type floating gate MOS capacitor,
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Impact of Annealing Ambience on Resistive Switching in Pt/TiO₂/Pt Structure Guobin WEI Yuta GOTO Akio OHTA Katsunori MAKIHARA Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2011/05/01 Vol. E94-C No. 5 pp. 699-704 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: ReRAM, TiO₂, low temperature, H₂ annealing, charge trapping,
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Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots Katsunori MAKIHARA Mitsuhisa IKEDA Akira KAWANAMI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 569-572 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Emerging Devices Keyword: Si quantum dots, random telegraph signals, AFM/KFM,
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Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories Kazuhiro SHIMANOE Katsunori MAKIHARA Mitsuhisa IKEDA Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 616-619 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Pd nanodot, remote hydrogen plasma, floating gate MOS memory,
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Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO₂ Structure as Evaluated by AFM/KFM Katsunori MAKIHARA Mitsuhisa IKEDA Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 712-715 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: Si quantum dots, AFM/KFM,
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Characterization of Germanium Nanocrystallites Grown on SiO₂ by a Conductive AFM Probe Technique Katsunori MAKIHARA Yoshihiro OKAMOTO Hideki MURAKAMI Seiichiro HIGASHI Seiichi MIYAZAKI
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2005/04/01 Vol. E88-C No. 4 pp. 705-708 Type of Manuscript: Special Section PAPER (Special Section on Fundamental and Application of Advanced Semiconductor Devices) Category: Nanomaterials and Quantum-Effect Devices Keyword: nanocrystal, AFM, conducting probe, local characterization,
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