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Katsumi TSUNENO

A New Hierarchical RSM for TCAD-Based Device Design in 0.4µm CMOS Development Hisako SATO Katsumi TSUNENO Kimiko AOYAMA Takahide NAKAMURA Hisaaki KUNITOMO Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1996/02/20 Vol. E79-C No. 2 pp. 226-233 Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures) Category: Statistical Analysis Keyword: TCAD, RSM, CMOS design,
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Modeling and Simulation on Degradation of Submicron NMOSFET Current Drive due to Velocity-Saturation Effects Katsumi TSUNENO Hisako SATO Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/20 Vol. E77-C No. 2 pp. 161-165 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Device Simulation Keyword: degradation of drain current, velocity-saturation, I_dso, lateral electric field,
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Evaluation of Two-Dimensional Transient Enhanced Diffusion of Phosphorus during Shallow Junction Formation Hisako SATO Katsumi TSUNENO Hiroo MASUDA
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 1994/02/20 Vol. E77-C No. 2 pp. 106-111 Type of Manuscript: Special Section PAPER (Special Issue on 1993 VLSI Process and Device Modeling Workshop (VPAD 93)) Category: Process Simulation Keyword: transient enhanced diffusion, two-dimension, phosphorus, silicon, shallow junction, furnace annealing,
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