Karol KALNA


Gate Tunnelling and Impact Ionisation in Sub 100 nm PHEMTs
Karol KALNA Asen ASENOV 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/03/01
Vol. E86-C  No. 3  pp. 330-335
Type of Manuscript:  Special Section PAPER (Special Issue on the 2002 IEEE International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'02))
Category: 
Keyword: 
impact ionisationgate tunnelling currentHEMTMonte Carlo device simulations
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