Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2000/08/20
Vol. E83-C
No. 8
pp. 1267-1274
Type of Manuscript: Special Section PAPER (Special Issue on 1999 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD'99))
Category: Process Modeling and Simulation
Keyword:
diffusion,
finite element,
three-dimensional,
gear scheme,
point-defects,
silicon,
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