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Hyungcheol SHIN

L-Shaped Tunneling Field-Effect Transistors for Complementary Logic Applications Sang Wan KIM Woo Young CHOI Min-Chul SUN Hyun Woo KIM Jong-Ho LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2013/05/01 Vol. E96-C No. 5 pp. 634-638 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: L-shaped TFETs, subthreshold swing, steep slope, complementary logic function,
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Simulation Study on Dependence of Channel Potential Self-Boosting on Device Scale and Doping Concentration in 2-D and 3-D NAND-Type Flash Memory Devices Seongjae CHO Jung Hoon LEE Yoon KIM Jang-Gn YUN Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2010/05/01 Vol. E93-C No. 5 pp. 596-601 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Flash/Advanced Memory Keyword: NAND, flash memory, program inhibition, self-boosting, FinFET, device simulation,
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Design Consideration for Vertical Nonvolatile Memory Device Regarding Gate-Induced Barrier Lowering (GIBL) Seongjae CHO Jung Hoon LEE Gil Sung LEE Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 620-626 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: 3-D nonvolatile memory, NAND flash memory array, saturation current, channel potential barrier, gate-induced barrier lowering (GIBL),
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Application of the Compact Channel Thermal Noise Model of Short Channel MOSFETs to CMOS RFIC Design Jongwook JEON Ickhyun SONG Jong Duk LEE Byung-Gook PARK Hyungcheol SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 627-634 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: CMOS, channel thermal noise, radio frequency integrated circuit (RFIC), low noise amplifier (LNA), noise figure,
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3-Dimensional Terraced NAND (3D TNAND) Flash Memory-Stacked Version of Folded NAND Array Yoon KIM Seongjae CHO Gil Sung LEE Il Han PARK Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 653-658 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: NAND, flash memory, stacked NAND, vertical channel,
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Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory Doo-Hyun KIM Il Han PARK Seongjae CHO Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2009/05/01 Vol. E92-C No. 5 pp. 659-663 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: SONOS, flash memory, nitride-based charge trap memory, retention, multi-bit, double gate,
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Establishing Read Operation Bias Schemes for 3-D Pillar Structure Flash Memory Devices to Overcome Paired Cell Interference (PCI) Seongjae CHO Il Han PARK Jung Hoon LEE Jang-Gn YUN Doo-Hyun KIM Jong Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 731-735 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: memory array, electrical interference, 3-D memory device, read operation, PCI (paired cell interference),
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FN Stress Induced Degradation on Random Telegraph Signal Noise in Deep Submicron NMOSFETs Hochul LEE Youngchang YOON Ickhyun SONG Hyungcheol SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2008/05/01 Vol. E91-C No. 5 pp. 776-779 Type of Manuscript: Special Section LETTER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Keyword: random telegraph signal noise, FN stress, flash memory, MOSFET,
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Analyses on Current Characteristics of 3-D MOSFET Determined by Junction Doping Profiles for Nonvolatile Memory Devices Seongjae CHO Jang-Gn YUN Il Han PARK Jung Hoon LEE Jong Pil KIM Jong-Duk LEE Hyungcheol SHIN Byung-Gook PARK
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 988-993 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Novel MOSFET Structures Keyword: 3-D devices, vertical ion implantation, doping profile, concentration peak, doping gradient,
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Accurate Extraction of the Trap Depth from RTS Noise Data by Including Poly Depletion Effect and Surface Potential Variation in MOSFETs Hochul LEE Youngchang YOON Seongjae CHO Hyungcheol SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2007/05/01 Vol. E90-C No. 5 pp. 968-972 Type of Manuscript: Special Section PAPER (Special Section on Fundamentals and Applications of Advanced Semiconductor Devices) Category: Ultra-Thin Gate Insulators Keyword: trap depth, RTN, time constants, poly gate depletion effect, surface potential variation,
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Characteristics of MOSFET with Non-overlapped Source-Drain to Gate Hyunjin LEE Sung-il CHANG Jongho LEE Hyungcheol SHIN
Publication: IEICE TRANSACTIONS on Electronics Publication Date: 2002/05/01 Vol. E85-C No. 5 pp. 1079-1085 Type of Manuscript: Special Section PAPER (Special Issue on Advanced Sub-0.1 µm CMOS Devices) Category: Keyword: non-overlap, 50 nm MOSFET, SCE, extended source/drain,
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