Hitoshi SUMIDA

Lateral IGBT Structure on the SOI Film with the Collector-Short Region for Improved Blocking Capability
Hitoshi SUMIDA  Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/04/20
Vol. E79-C  No. 4  pp. 593-596
Type of Manuscript: LETTER
Category: Semiconductor Materials and Devices
Keyword: 
LIGBT,  SOI,  blocking capability,  collector-short region,  leakage current, 
  Summary |  Full Text:PDF
The Substrate Bias Effect on the Static and Dynamic Characteristics of the Laterall IGBT on the Thin SOI Film
Hitoshi SUMIDA  Atsuo HIRABAYASHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/09/20
Vol. E77-C  No. 9  pp. 1464-1471
Type of Manuscript: PAPER
Category: Semiconductor Materials and Devices
Keyword: 
SOI,  lateral IGBT,  substrate bias,  blocking capability,  switching characteristics, 
  Summary |  Full Text:PDF