Hitoshi KUME

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology
Hideaki KURATA  Satoshi NODA  Yoshitaka SASAGO  Kazuo OTSUGA  Tsuyoshi ARIGANE  Tetsufumi KAWAMURA  Takashi KOBAYASHI  Hitoshi KUME  Kazuki HOMMA  Teruhiko ITO  Yoshinori SAKAMOTO  Masahiro SHIMIZU  Yoshinori IKEDA  Osamu TSUCHIYA  Kazunori FURUSAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2007/11/01
Vol. E90-C  No. 11  pp. 2146-2156
Type of Manuscript: PAPER
Category: Integrated Electronics
Keyword: 
flash memory,  multilevel,  inversion-layer-bit-line,  AG-AND, 
  Summary |  Full Text:PDF (2.3MB)
A New Simple Method for Extracting the Capacitance Coupling Coefficients of Sub-0.5-µm Flash Memory Cells
Keiichi HARAGUCHI  Hitoshi KUME  Masahiro USHIYAMA  Makoto OHKURA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/04/20
Vol. E82-C  No. 4  pp. 602-606
Type of Manuscript: Special Section PAPER (Special Issue on Microelectronic Test Structures)
Category: 
Keyword: 
extracting,  capacitance coupling coefficients,  sub-0.5-µm flash memory cells,  a band-to-band tunneling current, 
  Summary |  Full Text:PDF (279.4KB)
Programming and Program-Verification Methods for Low-Voltage Flash Memories Using a Sector Programming Scheme
Katsutaka KIMURA  Toshihiro TANAKA  Masataka KATO  Tetsuo ADACHI  Keisuke OGURA  Hitoshi KUME 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/20
Vol. E78-C  No. 7  pp. 832-837
Type of Manuscript: Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
flash memory,  program,  erase,  Fowler-Nordheim tunneling,  sector, 
  Summary |  Full Text:PDF (506.1KB)