Hideaki MATSUZAKI

Novel Fabrication Technology for High Yield Sub-100-nm-Gate InP-Based HEMTs
Hideaki MATSUZAKI  Takashi MARUYAMA  Takatomo ENOKI  Masami TOKUMITSU 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 949-953
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
HEMT,  InP,  InGaAs,  InAlAs,  lattice-matched,  current gain cutoff frequency, 
  Summary |  Full Text:PDF (1.1MB)
W-Band Active Integrated Antenna Oscillator Based on Full-Wave Design Methodology and 0.1-µm Gate InP-Based HEMTs
Koji INAFUNE  Eiichi SANO  Hideaki MATSUZAKI  Toshihiko KOSUGI  Takatomo ENOKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 954-958
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: Millimeter-Wave Devices
Keyword: 
millimeter wave,  FDTD method,  AIA,  InP-based HEMT, 
  Summary |  Full Text:PDF (1.4MB)
SCFL-Compatible 40-Gbit/s RTD/HEMT Selector Circuit
Kimikazu SANO  Koichi MURATA  Hideaki MATSUZAKI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2000/10/20
Vol. E83-C  No. 10  pp. 1690-1692
Type of Manuscript: LETTER
Category: Electronic Circuits
Keyword: 
resonant tunneling diodes (RTDs),  HEMTs,  selector circuit,  SCFL,  lightwave communications, 
  Summary |  Full Text:PDF (263.6KB)