Hans-Oliver JOACHIM


Low-Voltage Operation of a High-Resistivity Load SOI SRAM Cell by Reduced Back-Gate-Bias Effect
Yasuo YAMAGUCHI Jun TAKAHASHI Takehisa YAMAGUCHI Tomohisa WADA Toshiaki IWAMATSU Hans-Oliver JOACHIM Yasuo INOUE Tadashi NISHIMURA Natsuro TSUBOUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1995/07/25
Vol. E78-C  No. 7  pp. 812-817
Type of Manuscript:  Special Section PAPER (Special Issue on LSI Memory Device, Circuit, Architecture and Application Technologies for Multimedia Age)
Category: 
Keyword: 
SOISIMOXSRAMlow-voltage operationback-gate bias effect
 Summary | Full Text:PDF(695.1KB)

Two-Dimensional Device Simulation of 0.1 µm Thin-Film SOI MOSFET's
Hans-Oliver JOACHIM Yasuo YAMAGUCHI Kiyoshi ISHIKAWA Norihiko KOTANI Tadashi NISHIMURA Katsuhiro TSUKAMOTO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/25
Vol. E75-C  No. 12  pp. 1498-1505
Type of Manuscript:  Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: Deep Sub-micron SOI CMOS
Keyword: 
thin-film SOI MOSFET'sminiaturized devicesdevice simulation
 Summary | Full Text:PDF(732.2KB)