Eiji OHUE


High-Frequency, Low-Noise Si Bipolar Transistor Fabricated Using Self-Aligned Metal/IDP Technology
Hiromi SHIMAMOTO Takahiro ONAI Eiji OHUE Masamichi TANABE Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2007-2012
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
silicon bipolar transistornoise figureoptical communicationwireless communication
 Summary | Full Text:PDF(872KB)

DC and AC Performances in Selectively Grown SiGe-Base HBTs
Katsuya ODA Eiji OHUE Masamichi TANABE Hiromi SHIMAMOTO Katsuyoshi WASHIO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1999/11/25
Vol. E82-C  No. 11  pp. 2013-2020
Type of Manuscript:  Special Section PAPER (Special Issue on High-Frequency/High-Speed Devices for Information and Communication Systems in the 21st Century)
Category: Low Power-Consumption RF ICs
Keyword: 
SiGe HBTUHV/CVDselective epitaxial growthGe profilecurrent gaincutoff frequency
 Summary | Full Text:PDF(558.8KB)