Dimitris PAVLIDIS


DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication
Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1348-1353
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium NitrideSchottky diodevaractormultiplier
 Summary | Full Text:PDF(1.4MB)

Prospective for Gallium Nitride-Based Optical Waveguide Modulators
Arnaud STOLZ Laurence CONSIDINE Elhadj DOGHECHE Didier DECOSTER Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1363-1368
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Gallium-nitrideelectro-opticoptical waveguideoptoelectronics
 Summary | Full Text:PDF(2MB)

High-Performance Modulation-Doped Heterostructure-Thermopiles for Uncooled Infrared Image-Sensor Application
Masayuki ABE Noriaki KOGUSHI Kian Siong ANG René HOFSTETTER Kumar MANOJ Louis Nicholas RETNAM Hong WANG Geok Ing NG Chon JIN Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2012/08/01
Vol. E95-C  No. 8  pp. 1354-1362
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2011)
Category: GaN-based Devices
Keyword: 
Seebeck effectheterostructure-thermopileAlGaAs/InGaAsAlGaN/GaNHEMTFPAinfrared image sensor
 Summary | Full Text:PDF(3.9MB)

Dispersion, High-Frequency and Power Characteristics of AlN/GaN Metal Insulator Semiconductor Field Effect Transistors with in-situ MOCVD Deposited Si3N4
Sanghyun SEO Eunjung CHO Giorgi AROSHVILI Chong JIN Dimitris PAVLIDIS Laurence CONSIDINE 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1245-1250
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: GaN-based Devices
Keyword: 
AlNAlN/GaN MISFETAlN/GaN HFETwide-bandgapfrequency-dispersion
 Summary | Full Text:PDF(1MB)

Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements
Jochen SIGMUND Jean-Francois LAMPIN Valentin IVANNIKOV Cezary SYDLO Michail FEIGINOV Dimitris PAVLIDIS Peter MEISSNER Hans L. HARTNAGEL 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 1058-1062
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Sb-based Devices
Keyword: 
LTG-GaAsSbTHz
 Summary | Full Text:PDF(250.3KB)

AlN/GaN Metal Insulator Semiconductor Field Effect Transistor on Sapphire Substrate
Sanghyun SEO Kaustav GHOSE Guang Yuan ZHAO Dimitris PAVLIDIS 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2008/07/01
Vol. E91-C  No. 7  pp. 994-1000
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2007)
Category: Nitride-based Devices
Keyword: 
AlNMISFETsHFETsDrift-diffusion simulations
 Summary | Full Text:PDF(567.6KB)

Improvement of CO Sensitivity in GaN-Based Gas Sensors
Eunjung CHO Dimitris PAVLIDIS Guangyuan ZHAO Seth M. HUBBARD Johannes SCHWANK 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1047-1051
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNgas sensorPt Schottky diodeCO
 Summary | Full Text:PDF(494.7KB)

Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications
Oktay YILMAZOGLU Kabula MUTAMBA Dimitris PAVLIDIS Marie Rose MBARGA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2006/07/01
Vol. E89-C  No. 7  pp. 1037-1041
Type of Manuscript:  Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM2005)
Category: GaN-Based Devices
Keyword: 
GaNpressure sensorHEMTSchottky diode
 Summary | Full Text:PDF(436.6KB)

First Microwave Characteristics of InGaAlAs/GaAsSb/InP Double HBTs
Xin ZHU Dimitris PAVLIDIS Guangyuan ZHAO Philippe BOVE Hacene LAHRECHE Robert LANGER 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2010-2014
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
DHBTheterojunctionInPGaAsSb
 Summary | Full Text:PDF(266.7KB)

A Novel Pt-AlGaN/GaN Heterostructure Schottky Diode Gas Sensor on Si
Guangyuan ZHAO William SUTTON Dimitris PAVLIDIS Edwin L. PINER Johannes SCHWANK Seth HUBBARD 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2003/10/01
Vol. E86-C  No. 10  pp. 2027-2031
Type of Manuscript:  Special Section PAPER (Special Issue on Heterostructure Microelectronics with TWHM2003)
Category: 
Keyword: 
AlGaN/GaNgas sensorSchottky diodesensitivity
 Summary | Full Text:PDF(599.2KB)

GaN-Based Gunn Diodes: Their Frequency and Power Performance and Experimental Considerations
Egor ALEKSEEV Dimitris PAVLIDIS William Earl SUTTON Edwin PINER Joan REDWING 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1462-1469
Type of Manuscript:  Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Novel Electron Devices
Keyword: 
GaNTHzGunnNDR
 Summary | Full Text:PDF(1.3MB)