Daisaburo TAKASHIMA


Overview and Trend of Chain FeRAM Architecture
Daisaburo TAKASHIMA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/06/01
Vol. E84-C  No. 6  pp. 747-756
Type of Manuscript: INVITED PAPER (Special Issue on Nonvolatile Memories)
Category: FeRAMs
Keyword: 
ferroelectricnonvolatilememoryFeRAMchain FeRAM
  Summary |  Full Text:PDF (1.3MB)

Folded Bitline Architecture for a Gigabit-Scale NAND DRAM
Shinichiro SHIRATAKE  Daisaburo TAKASHIMA  Takehiro HASEGAWA  Hiroaki NAKANO  Yukihito OOWAKI  Shigeyoshi WATANABE  Takashi OHSAWA  Kazunori OHUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1997/04/20
Vol. E80-C  No. 4  pp. 573-581
Type of Manuscript: Special Section PAPER (Special Issue on Circuit Technologies for Memory and Analog LSIs)
Category: 
Keyword: 
DRAMcascadeNANDfolded bitlineopen bitlinedie sizenoise immunity
  Summary |  Full Text:PDF (804.6KB)

A 250 mV Bit-Line Swing Scheme for 1-V Operating Gigabit Scale DRAMs
Tsuneo INABA  Daisaburo TAKASHIMA  Yukihito OOWAKI  Tohru OZAKI  Shigeyoshi WATANABE  Takashi OHSAWA  Kazunori OHUCHI  Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1996/12/20
Vol. E79-C  No. 12  pp. 1699-1706
Type of Manuscript: Special Section PAPER (Special Issue on Low-Power LSI Technologies)
Category: 
Keyword: 
DRAMpower dissipationreliabilitybit-linewordlinesmall swingthreshold voltagesense amplifiermemory cell
  Summary |  Full Text:PDF (774.7KB)

Open/Folded Bit-Line Arrangement for Ultra-High-Density DRAM's
Daisaburo TAKASHIMA  Shigeyoshi WATANABE  Hiroaki NAKANO  Yukihito OOWAKI  Kazunori OHUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/05/20
Vol. E77-C  No. 5  pp. 869-872
Type of Manuscript: Special Section LETTER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Category: 
Keyword: 
  Summary |  Full Text:PDF (370.2KB)

Standby/Active Mode Logic for Sub-1-V Operating ULSI Memory
Daisaburo TAKASHIMA  Shigeyoshi WATANABE  Hiroaki NAKANO  Yukihito OOWAKI  Kazunori OHUCHI  Hiroyuki TANGO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1994/05/20
Vol. E77-C  No. 5  pp. 771-777
Type of Manuscript: Special Section PAPER (Special Section on the 1993 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.29, No.4 April 1994))
Category: 
Keyword: 
  Summary |  Full Text:PDF (546.1KB)

Low-Power On-Chip Supply Voltage Conversion Scheme for Ultrahigh-Density DRAM's
Daisaburo TAKASHIMA  Shigeyoshi WATANABE  Tsuneaki FUSE  Kazumasa SUNOUCHI  Takahiko HARA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/05/20
Vol. E76-C  No. 5  pp. 844-849
Type of Manuscript: Special Section PAPER (Special Section on the 1992 VLSI Circuits Symposium (Joint Issue with the IEEE Journal of Solid-State Circuits, Vol.28, No.4 April 1993))
Category: 
Keyword: 
  Summary |  Full Text:PDF (764.3KB)

Word-Line Architecture for Highly Reliable 64-Mb DRAM
Daisaburo TAKASHIMA  Yukihito OOWAKI  Ryu OGIWARA  Yohji WATANABE  Kenji TSUCHIDA  Masako OHTA  Hiroaki NAKANO  Shigeyoshi WATANABE  Kazunori OHUCHI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/04/20
Vol. E75-C  No. 4  pp. 501-507
Type of Manuscript: Special Section PAPER (Joint Special Issue on the 1991 VLSI Circuits Symposium)
Category: 
Keyword: 
  Summary |  Full Text:PDF (682.3KB)