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Chinchun MENG
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The Effect of Selectively and Fully Ion-Implanted Collector on RF Characteristics of BJT Devices Chinchun MENG
Jen-Yi SU
Bo-Chen TSOU
Guo-Wei HUANG
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2006/04/01
Vol. E89-C
No. 4
pp. 520-523
Type of Manuscript: Special Section LETTER (Special Section on Advanced RF Technologies for Compact Wireless Equipment and Mobile Phones)
Category: Keyword: BJT,
selectively implanted collector,
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Summary |
Full Text:PDF
(283.8KB)
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Determining GaInP/GaAs HBT Device Structure by DC Measurements on a Two-Emitter HBT Device and High Frequency Transit Time Measurements Chinchun MENG
Bo-Chen TSOU
Sheng-Che TSENG
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C
No. 6
pp. 1127-1132
Type of Manuscript: Special Section PAPER (Special Section on Analog Circuit and Device Technologies)
Category: Device Keyword: GaInP/GaAs HBT,
emitter ledge,
transit time measurement,
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(423.4KB)
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A 5.7 GHz Gilbert Upconversion Mixer with an LC Current Combiner Output Using 0.35 µm SiGe HBT Technology Tzung-Han WU
Chinchun MENG
Tse-Hung WU
Guo-Wei HUANG
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Publication: IEICE TRANSACTIONS on Electronics
Publication Date: 2005/06/01
Vol. E88-C
No. 6
pp. 1267-1270
Type of Manuscript: Special Section LETTER (Special Section on Analog Circuit and Device Technologies)
Category: RF Keyword: SiGe,
HBT,
Gilbert mixer,
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Summary |
Full Text:PDF
(378.6KB)
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