Atsushi FUKURODA


High-Speed SOI Bipolar Transistors Using Bonding and Thinning Techniques
Manabu KOJIMA  Atsushi FUKURODA  Tetsu FUKANO  Naoshi HIGAKI  Tatsuya YAMAZAKI  Toshihiro SUGII  Yoshihiro ARIMOTO  Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1993/04/20
Vol. E76-C  No. 4  pp. 572-576
Type of Manuscript: Special Section PAPER (Special Issue on Sub-Half Micron Si Device and Process Technologies)
Category: Device Technology
Keyword: 
SOI bipolar transistorsthin buried layerwafer bondingselective polishing
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A 4 GHz Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
Naoshi HIGAKI  Tetsu FUKANO  Atsushi FUKURODA  Toshihiro SUGII  Yoshihiro ARIMOTO  Takashi ITO 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1992/12/20
Vol. E75-C  No. 12  pp. 1453-1458
Type of Manuscript: Special Section PAPER (Special Issue on SOI (Si on Insulator) Devices)
Category: SOI Devices
Keyword: 
bonded SOIlateral bipolarsidewall self-aligning baseBiCMOSrecrystallization
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