Akira KAMISAWA


Properties of Ferroelectric Memory with Ir System Materials as Electrodes
Naoki IZUMI Yoshikazu FUJIMORI Takashi NAKAMURA Akira KAMISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 513-517
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectric thin filmsPb(Zr,Ti)O3FRAMfatigue propertyimprint propertyhysteresissol-gel methodIr system materialsSTCpoly-Si plugs
 Summary | Full Text:PDF(420.1KB)

Study of Ferroelectric Materials for Ferroelectric Memory FET
Yoshikazu FUJIMORI Naoki IZUMI Takashi NAKAMURA Akira KAMISAWA 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 1998/04/25
Vol. E81-C  No. 4  pp. 572-576
Type of Manuscript:  Special Section PAPER (Special Issue on Advanced Memory Devices Using High-Dielectric-Constant and Ferroelectric Thin Films)
Category: 
Keyword: 
ferroelectricthin filmMFMISlow dielectric constantsol-gelstrontium niobatestrontium tantalate niobatehysteresis
 Summary | Full Text:PDF(450.2KB)