Akira ENDOH

E-Band Low-Noise Amplifier MMICs Using Nanogate InGaAs/InAlAs HEMT Technology
Issei WATANABE  Akira ENDOH  Takashi MIMURA  Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2010/08/01
Vol. E93-C  No. 8  pp. 1251-1257
Type of Manuscript: Special Section PAPER (Special Section on Heterostructure Microelectronics with TWHM 2009)
Category: III-V High-Speed Devices and Circuits
Keyword: 
InGaAs/InAlAs HEMT,  E-band LNA-MMIC,  maximum oscillation frequency,  current-gain cutoff frequency,  minimum noise figure, 
  Summary |  Full Text:PDF (844KB)
High RF Performance of 50-nm-Gate Lattice-Matched InAlAs/InGaAs HEMTs
Akira ENDOH  Yoshimi YAMASHITA  Masataka HIGASHIWAKI  Kohki HIKOSAKA  Takashi MIMURA  Satoshi HIYAMIZU  Toshiaki MATSUI 
Publication:   IEICE TRANSACTIONS on Electronics
Publication Date: 2001/10/01
Vol. E84-C  No. 10  pp. 1328-1334
Type of Manuscript: Special Section PAPER (Joint Special Issue on Heterostructure Microelectronics with TWHM 2000 (Topical Workshop on Heterostructure Microelectronics 2000))
Category: Hetero-FETs & Their Integrated Circuits
Keyword: 
InAlAs/InGaAs,  InP,  HEMT,  cutoff frequency,  low-temperature fabrication process, 
  Summary |  Full Text:PDF (950KB)